-
- IGBT, Transistor
10N60 A CLASS HIGH QUALITY
- ৳199.00
- 10N60 A CLASS HIGH QUALITY
- Add to cart
-
- IGBT, Transistor
20N60 IGBT
- ৳279.00
- 20N60 IGBT
- Add to cart
-
- NPN & PNP, Transistor
2N 2907 (5PCS)
- ৳40.00
- PNP Silicon Planar Epitaxial Transistor NPN complements: 2N2222 and 2N2222A. Collective-Base Voltage: 60V Collector-Emitter Voltage: 40V Emitter-Base Voltage: 5V Collector Current: 0.6A Total Power Dissipation: 1.8W
- Add to cart
-
- NPN & PNP, Transistor
2N3904 (5Pcs)
- ৳20.00
- Collector-Emitter Voltage, VCEO: 40 V Collector-Base Voltage, VCBO: 60 V Emitter-Base Voltage, VEBO: 6 V Collector Current Continuous IC: 200 mA Power Dissipation, PD: 625 mW Package: TO-92
- Add to cart
-
- NPN & PNP, Transistor
BC557 (5Pcs)
- ৳25.00
- PNP general purpose transistors. Low current (max. 100 mA) Low voltage (max. 65 V) Collector-base voltage(open emitter):-50V Collector-emitter voltage(open base):-45V Emitter-base voltage(open collector):-5V Total power dissipation:500mW
- Add to cart
-
- NPN & PNP, Transistor
BC558
- ৳20.00
- Maximum Collector-Emitter Voltage: 30V Maximum Collector-Base Voltage: 30V Maximum Emitter-Base Voltage: 5V Maximum Collector Current: 10mA PCB Package: TO-92
- Add to cart
-
- IGBT, Transistor
BT136
- ৳26.00
- Gate Turn-On Voltage (Vgt): 1.5V Peak Off-State Voltage(Vdrm): 500V On-State Current (It): 4.0A Gate Current (Igt): 25mA Typical Voltage Change over Time (dV/dT): 250V/µs
- Add to cart
-
- IGBT, Transistor
FGA15N120 IGBT
- ৳219.00
- FGA15N120 IGBT
- Add to cart
-
- IGBT, Transistor
G15N60 RUFD G15N60 15A 600V IGBT
- ৳185.00
- G15N60 RUFD G15N60 15A 600V IGBT
- Add to cart
-
- MOSFET, Transistor
IRF540
- ৳66.00
- Minimum Drain to Source Voltage, VDSS: 100V Minimum Drain Current, ID: 30A Maximum Static Drain-source On Resistance:0.077? Typical RDS(on) = 0.050 W Avalanche rugged technology 100% Avalanche tested Repetitive avalanche data at 100oC Low gate charge High current capability 175oC Operating temperature Application oriented characterization
- Add to cart
-
- MOSFET, Transistor
IRF630
- ৳55.00
- Material: metal-oxide-semiconductor Polarity: N-channel Package: TO-220 Power Switch Drain current Ic: 10 Ampere Maximum Drain Voltage - source (Uds): 200 Volts Maximum source-gate voltage (Ugs): 20 Volts Maximum junction temperature (Tj): 150oC Maximum Power Dissipation (Pd): 100 Watt
- Add to cart
-
- MOSFET, Transistor
IRF9640
- ৳66.00
- Transistor Type: MOSFET Transistor Polarity: P Channel Drain Source Voltage, Vds: -100V Continuous Drain Current, Id: -23A On Resistance, Rds(on): 117mohm Rds(on) Test Voltage, Vgs: -10V
- Add to cart
