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- MOSFET, Transistor
IRF540
- ৳66.00
- Minimum Drain to Source Voltage, VDSS: 100V Minimum Drain Current, ID: 30A Maximum Static Drain-source On Resistance:0.077? Typical RDS(on) = 0.050 W Avalanche rugged technology 100% Avalanche tested Repetitive avalanche data at 100oC Low gate charge High current capability 175oC Operating temperature Application oriented characterization
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- MOSFET, Transistor
IRF630
- ৳55.00
- Material: metal-oxide-semiconductor Polarity: N-channel Package: TO-220 Power Switch Drain current Ic: 10 Ampere Maximum Drain Voltage - source (Uds): 200 Volts Maximum source-gate voltage (Ugs): 20 Volts Maximum junction temperature (Tj): 150oC Maximum Power Dissipation (Pd): 100 Watt
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- MOSFET, Transistor
IRF9640
- ৳66.00
- Transistor Type: MOSFET Transistor Polarity: P Channel Drain Source Voltage, Vds: -100V Continuous Drain Current, Id: -23A On Resistance, Rds(on): 117mohm Rds(on) Test Voltage, Vgs: -10V
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